Nichia uses a GaN substrate fabricated with a blue laser to improve the process and structure to produce a continuous wave green laser diode with a wavelength of 515 nm, breaking the 500 previously maintained by an indium-doped indium gallium nitride (InGaN) laser. The longest wavelength of nm is recorded, and it is moving toward a goal with a life cycle of hundreds of hours.
Nichia has not provided reliability data for 515 nm lasers, but their other laser diodes with a wavelength of 510-513 nm can operate for 500 hours without being charged. After more than 500 hours, the laser performance will be Gradually decreases. Nichia's researchers define the useful life of the laser based on a 30% increase in operating current compared to the initial value. It is estimated that the laser can last up to 5,000 hours.
The Nichia team used diodes separated by a separate confinement heterostructure (SCH) to produce lasers, almost identical to the designs they published in 2001. The deposition of AlInGaN thin films on a free-standing c-plane GaN substrate by an optimized MOCVD process is the key to producing green light in high indium content materials.
The Nichia team said that they improved the epitaxial layer, especially the multiple quantum well layer (MQW) growth conditions, while also improving the crystal quality of the high indium-rich InGaN active layer, but did not further publish details about the optimization conditions. Nichia has previously published an InGaN laser diode with a wavelength of 488 nm, but the non-radiative region is generated due to poor crystal quality, and a dark region is exhibited under photoluminescence (PL) analysis. Nichia's Takashi Mukai et al. pointed out that these areas have been eliminated in the design of new devices.
The current and current density thresholds of the 515 nm laser diode at room temperature are 53 mA and 4.4 kA/cm2, respectively. The output power is 5 mW at an operating current of 88 mA and a voltage of 5.5 V. The laser diode operating at 510 ° C 513 nm has a maximum wavelength shift of 0.022 nm / K due to temperature changes at room temperature, which is much smaller than the recently launched green laser diodes of Osram and Rohm.
Editor: China Lighting Network - Qiao Xiaoguang
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