Two-dimensional layered materials have attracted increasing attention from researchers due to their novel electronic/photoelectron properties and high compatibility with silicon-based technologies. In addition, different two-dimensional materials can be freely stacked by weak van der Waals forces to form artificial heterostructures with atomic level flat interfaces, which are commonly referred to as van der Waals heterojunctions. By choosing different 2D materials and specific stacking methods, their unique properties can be organically combined. From this research perspective, the Van der Waals heterojunction provides a new platform to study the properties of new electronic and optoelectronic devices. He Jun, the National Nanoscience Center of the Chinese Academy of Sciences, has long been engaged in the research of two-dimensional layered van der Waals heterojunctions in electronic/optoelectronic devices (Nano Letters 2015, 15, 7558-7566; Advanced Functional Materials 2016, 26, 5499-5506; Nano Energy 2018, 49, 103-108). Recently, new progress has been made in building asymmetric van der Waals heterojunctions to achieve ultra-high performance multi-functional integration. The research results were published online in Nature-Electronics (Nature Electronics 2018, 1, 356-361) on the topic of High-performance, multifunctional devices based on asymmetric van der Waals heterostructures. In the same period, Nature-Electronics wrote News & Views on the topic of Multifunctional devices from asymmetry. This work has applied for a Chinese invention patent (patent application number. 5).
In this research work, He Jun's research group successfully built asymmetric van der Waals heterojunction devices based on graphene, boron nitride, molybdenum disulfide and molybdenum disilicide, and its electrical transport/optoelectronic properties and storage capacity. A systematic study was carried out. The charge carrier injection type can be switched between tunneling and thermal activation under different bias conditions. This asymmetric transmission behavior is further confirmed by temperature characterization and photoresponse characterization. Thanks to the large tunability of vertical transmission, the heterojunction device can be effectively regulated by the external electric field and exhibit excellent performance simultaneously in a variety of functions. Many performance metrics are the highest reported in current Van der Waals heterojunction devices, including ultra-high current-to-switch ratios (6×108) and significant negative transconductance, as well as gate-adjustable rectification characteristics. At 300 K and 77 K, the current rectification ratios reached 3 × 107 and 108, respectively. When working as a photodetector, the device exhibits high optical responsivity (28.6 A/W) and optical switching ratio (107), as well as significant open circuit and short circuit currents. The asymmetric van der Waals heterojunction can also be used as a programmable rectifier. By applying a corresponding erase voltage and write voltage to the silicon substrate, the device exhibits an ultra-high erase/write current ratio (109), a writable ultra-high current rectification ratio (2×107), and more stability. Level storage state. More importantly, the memory state and current rectification ratio can be continuously adjusted by the write voltage and the write time. This research provides an organic integration of ultra-high device performance and multiple functional integrations, providing new ideas for exploring new electronic and optoelectronic devices.
The research work was supported by the National Key Basic Research and Development Program and the National Outstanding Youth Science Fund.
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