Fairchild (NASDAQ:FCS), the world's leading provider of high-performance power semiconductor solutions, announced the first 1200V silicon carbide (SiC) diode, the FFSH40120ADN, to be included in the upcoming SiC solution portfolio. 1200V diodes are ideal for next-generation PV inverters , industrial motor controllers and welders with superior switching performance, higher reliability and lower electromagnetic interference (EMI), all of which are constantly being improved. Power density and energy efficiency requirements.
Zhao Jin, vice president and general manager of Fairchild's high-power industrial division, said: "Market trends and increasingly stringent industry standards have driven the market's demand for energy-efficient products. Our new 1200V diodes are specifically designed to help manufacturers meet These rising energy efficiency requirements provide better reliability, durability and cost efficiency. Silicon carbide has a huge advantage over silicon, so we use this material to make diodes in the process of building a comprehensive silicon carbide solution series. In, we will develop more SiC-based semiconductor devices."
The FFSH40120ADN diodes offer best-in-class low leakage current performance, with leakage currents well below competitive levels at operating temperatures up to 175°C. The main advantage of the 1200VSiC diode is its ultra-fast switching speed and no reverse recovery current, which significantly reduces switching losses and achieves superior energy efficiency compared to silicon devices. Faster switching speeds also allow manufacturers to reduce the size of the product's solenoids and associated passive components, increasing assembly efficiency, reducing system weight, and reducing bill of materials (BOM) costs.
The ability of the diode to stabilize the switch over a wide temperature range is another major factor in its superior performance, and the zero recovery voltage characteristic that eliminates the potential for voltage overshoot is equally important.
Because SiC's thermal performance is superior to silicon, the durability and reliability of FFSH40120ADN diodes greatly exceeds that of silicon-based equivalent diodes. The breakdown voltage of SiC is ten times higher than that of silicon devices, and the thermal conductivity of SiC is three times higher than that of silicon devices.
Visit the FFSH40120ADN product page for samples and more information on the new 1200VSiC diode.
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